DF23MR12W1M1B11BOMA1 Infineon Technologies
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Technische Details DF23MR12W1M1B11BOMA1 Infineon Technologies
Description: SIC 2N-CH 1200V AG-EASY1BM-2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 25A, Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V, Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V, Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V, Vgs(th) (Max) @ Id: 5.5V @ 10mA, Supplier Device Package: AG-EASY1BM-2.
Weitere Produktangebote DF23MR12W1M1B11BOMA1
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DF23MR12W1M1B11BOMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH SiC 1.2KV 25A 22-Pin EASY1B-2 Tray |
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DF23MR12W1M1B11BOMA1 | Hersteller : Infineon Technologies |
Description: SIC 2N-CH 1200V AG-EASY1BM-2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: AG-EASY1BM-2 |
Produkt ist nicht verfügbar |