DG2026DQ-T1-E3 Vishay Semiconductors
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Technische Details DG2026DQ-T1-E3 Vishay Semiconductors
Description: IC SWITCH SPDT X 2 4OHM 10MSOP, Packaging: Tape & Reel (TR), Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 85°C (TA), On-State Resistance (Max): 4Ohm, Supplier Device Package: 10-MSOP, Voltage - Supply, Single (V+): 1.8V ~ 5.5V, Charge Injection: 79pC, Crosstalk: -82dB @ 1MHz, Switch Circuit: SPDT, Multiplexer/Demultiplexer Circuit: 2:1, Switch Time (Ton, Toff) (Max): 48ns, 33ns, Channel Capacitance (CS(off), CD(off)): 14pF, Current - Leakage (IS(off)) (Max): 1nA, Number of Circuits: 2.
Weitere Produktangebote DG2026DQ-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DG2026DQ-T1-E3 | Hersteller : Vishay |
 Analog Switch Dual SPDT 10-Pin MSOP T/R |
Produkt ist nicht verfügbar |
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DG2026DQ-T1-E3 | Hersteller : Vishay Siliconix |
Description: IC SWITCH SPDT X 2 4OHM 10MSOP Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 4Ohm Supplier Device Package: 10-MSOP Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 79pC Crosstalk: -82dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Switch Time (Ton, Toff) (Max): 48ns, 33ns Channel Capacitance (CS(off), CD(off)): 14pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 2 |
Produkt ist nicht verfügbar |