Produkte > VISHAY SILICONIX > DG636EEQ-T1-GE3
DG636EEQ-T1-GE3

DG636EEQ-T1-GE3 Vishay Siliconix


dg636e.pdf Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 2 96OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 96Ohm
-3db Bandwidth: 700MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: -0.33pC
Crosstalk: -62dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 300mOhm
Switch Time (Ton, Toff) (Max): 46ns, 55ns
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details DG636EEQ-T1-GE3 Vishay Siliconix

Description: IC SWITCH SPDT X 2 96OHM 16TSSOP, Packaging: Tape & Reel (TR), Package / Case: 16-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), On-State Resistance (Max): 96Ohm, -3db Bandwidth: 700MHz, Supplier Device Package: 16-TSSOP, Voltage - Supply, Single (V+): 3V ~ 16V, Voltage - Supply, Dual (V±): ±3V ~ 8V, Charge Injection: -0.33pC, Crosstalk: -62dB @ 1MHz, Switch Circuit: SPDT, Multiplexer/Demultiplexer Circuit: 2:1, Channel-to-Channel Matching (ΔRon): 300mOhm, Switch Time (Ton, Toff) (Max): 46ns, 55ns, Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF, Current - Leakage (IS(off)) (Max): 1nA, Part Status: Active, Number of Circuits: 2.