Technische Details DG636EN-T1-E4 Vishay
Description: IC SW SPDTX2 115OHM 16MINIQFN, Packaging: Tape & Reel (TR), Package / Case: 16-WFQFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), On-State Resistance (Max): 115Ohm, -3db Bandwidth: 610MHz, Supplier Device Package: 16-miniQFN (1.8x2.6), Voltage - Supply, Single (V+): 2.7V ~ 12V, Voltage - Supply, Dual (V±): ±2.7V ~ 5V, Charge Injection: 0.1pC, Crosstalk: -88dB @ 10MHz, Switch Circuit: SPDT, Multiplexer/Demultiplexer Circuit: 2:1, Channel-to-Channel Matching (ΔRon): 1Ohm, Switch Time (Ton, Toff) (Max): 60ns, 52ns, Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.2pF, Current - Leakage (IS(off)) (Max): 100pA, Part Status: Obsolete, Number of Circuits: 2.
Weitere Produktangebote DG636EN-T1-E4
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
DG636EN-T1-E4 | Hersteller : Vishay Siliconix |
Description: IC SW SPDTX2 115OHM 16MINIQFN Packaging: Tape & Reel (TR) Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 115Ohm -3db Bandwidth: 610MHz Supplier Device Package: 16-miniQFN (1.8x2.6) Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±2.7V ~ 5V Charge Injection: 0.1pC Crosstalk: -88dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 60ns, 52ns Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.2pF Current - Leakage (IS(off)) (Max): 100pA Part Status: Obsolete Number of Circuits: 2 |
Produkt ist nicht verfügbar |
||
DG636EN-T1-E4 | Hersteller : Vishay Siliconix |
Description: IC SW SPDTX2 115OHM 16MINIQFN Packaging: Cut Tape (CT) Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 115Ohm -3db Bandwidth: 610MHz Supplier Device Package: 16-miniQFN (1.8x2.6) Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±2.7V ~ 5V Charge Injection: 0.1pC Crosstalk: -88dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 60ns, 52ns Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.2pF Current - Leakage (IS(off)) (Max): 100pA Part Status: Obsolete Number of Circuits: 2 |
Produkt ist nicht verfügbar |