DI006P02PW Diotec Semiconductor
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.58 EUR |
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Technische Details DI006P02PW Diotec Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -6A, Pulsed drain current: -36A, Power dissipation: 2W, Case: QFN2X2, Gate-source voltage: ±12V, On-state resistance: 35mΩ, Mounting: SMD, Gate charge: 13nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DI006P02PW
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DI006P02PW | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -36A Power dissipation: 2W Case: QFN2X2 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DI006P02PW | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -36A Power dissipation: 2W Case: QFN2X2 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |