DI006P02PW

DI006P02PW

Hersteller: DIOTEC SEMICONDUCTOR
Material: DI006P02PW-DIO SMD P channel transistors
di006p02pw.pdf
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Technische Details DI006P02PW

Description: MOSFET, -20V, -6A, P, 2W, Input Capacitance (Ciss) (Max) @ Vds: 1242 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Supplier Device Package: 8-QFN (2x2), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).

Preis DI006P02PW ab 0 EUR bis 0 EUR

DI006P02PW
Hersteller: DIOTEC SEMICONDUCTOR
Material: DI006P02PW-DIO SMD P channel transistors
di006p02pw.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DI006P02PW
DI006P02PW
Hersteller: DComponents
Description: MOSFET, -20V, -6A, P, 2W
Input Capacitance (Ciss) (Max) @ Vds: 1242 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Supplier Device Package: 8-QFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
di006p02pw.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen