DI035N10PT Diotec Semiconductor
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Technische Details DI035N10PT Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 N 100V 35A 0, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V.
Weitere Produktangebote DI035N10PT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DI035N10PT | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 130A Drain-source voltage: 100V Drain current: 35A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 25W Anzahl je Verpackung: 1 Stücke |
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DI035N10PT | Hersteller : Diotec Semiconductor |
Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V |
Produkt ist nicht verfügbar |
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DI035N10PT | Hersteller : Diotec Semiconductor |
Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V |
Produkt ist nicht verfügbar |
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DI035N10PT | Hersteller : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 3x3, 100V, 35A, 150C, N |
Produkt ist nicht verfügbar |
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| DI035N10PT | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 130A Drain-source voltage: 100V Drain current: 35A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 25W |
Produkt ist nicht verfügbar |