DI110N03PQ Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET, 30V, 110A, 56W
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7462 pF @ 15 V
Description: MOSFET, 30V, 110A, 56W
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7462 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1250+ | 5.56 EUR |
2500+ | 3.5 EUR |
5000+ | 2.41 EUR |
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Technische Details DI110N03PQ Diotec Semiconductor
Description: MOSFET, 30V, 110A, 56W, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7462 pF @ 15 V.
Weitere Produktangebote DI110N03PQ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DI110N03PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 74A; Idm: 92A; 56W; QFN5x6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Power dissipation: 56W Pulsed drain current: 92A Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 74A On-state resistance: 2.65mΩ Gate charge: 14nC Case: QFN5x6 |
Produkt ist nicht verfügbar |
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DI110N03PQ | Hersteller : Diotec Semiconductor | MOSFET MOSFET, PowerQFN 5x6, 30V, 110A, 150C, N |
Produkt ist nicht verfügbar |
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DI110N03PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 74A; Idm: 92A; 56W; QFN5x6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Power dissipation: 56W Pulsed drain current: 92A Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 74A On-state resistance: 2.65mΩ Gate charge: 14nC Case: QFN5x6 |
Produkt ist nicht verfügbar |