auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG4496SSS-13 Diodes Zetex
Description: MOSFET N-CH 30V 10A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V, Power Dissipation (Max): 1.42W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V.
Weitere Produktangebote DMG4496SSS-13 nach Preis ab 0.15 EUR bis 3.39 EUR
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DMG4496SSS-13 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 30V 10A 8-Pin SO T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG4496SSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 10A 8-Pin SO T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG4496SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMG4496SSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 10A 8-Pin SO T/R |
auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG4496SSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 10A 8-Pin SO T/R |
auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG4496SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V |
auf Bestellung 63228 Stücke: Lieferzeit 21-28 Tag (e) |
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DMG4496SSS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET N-CHANNEL |
auf Bestellung 10766 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMG4496SSS-13 | Hersteller : Diodes INC. |
N-канальний ПТ; Udss, В = 30; Id = 10; Ptot, Вт = 1,42; Тип монт. = smd; Ciss, пФ @ Uds, В = 493,5 @ 15; Qg, нКл = 10,2 @ 10 В; Rds = 21,5 мОм @ 10 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2 В @ 250 мкА; SOICN-8 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG4496SSS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 10A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMG4496SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Polarisation: unipolar Power dissipation: 1.42W Kind of package: reel; tape Gate charge: 10.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 60A Mounting: SMD Case: SO8 Drain-source voltage: 30V Drain current: 6A On-state resistance: 29mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG4496SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Polarisation: unipolar Power dissipation: 1.42W Kind of package: reel; tape Gate charge: 10.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 60A Mounting: SMD Case: SO8 Drain-source voltage: 30V Drain current: 6A On-state resistance: 29mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |