DMJ70H600SH3 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7A
Pulsed drain current: 11A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7A
Pulsed drain current: 11A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details DMJ70H600SH3 DIODES INCORPORATED
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 7A, Pulsed drain current: 11A, Power dissipation: 45W, Case: TO251, Gate-source voltage: ±30V, On-state resistance: 0.6Ω, Mounting: THT, Gate charge: 18.2nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMJ70H600SH3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMJ70H600SH3 | Hersteller : Diodes Inc. / Pericom |
 MOSFET MOSFETBVDSS: 651V-800V |
Produkt ist nicht verfügbar |
||
| DMJ70H600SH3 | Hersteller : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 7A Pulsed drain current: 11A Power dissipation: 45W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 18.2nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |