DMN3027LFG-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.63 EUR |
6000+ | 0.6 EUR |
10000+ | 0.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN3027LFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V.
Weitere Produktangebote DMN3027LFG-7 nach Preis ab 0.62 EUR bis 1.66 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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DMN3027LFG-7 | Hersteller : Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 25Vgss 70A |
auf Bestellung 2000 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN3027LFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V |
auf Bestellung 20849 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN3027LFG-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 30V 8A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMN3027LFG-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 30V 8A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMN3027LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W Mounting: SMD Case: PowerDI3333-8 Power dissipation: 3W Kind of package: reel; tape Pulsed drain current: 70A Gate charge: 11.3nC Polarisation: unipolar Drain current: 7.7A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±25V On-state resistance: 26.5mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN3027LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W Mounting: SMD Case: PowerDI3333-8 Power dissipation: 3W Kind of package: reel; tape Pulsed drain current: 70A Gate charge: 11.3nC Polarisation: unipolar Drain current: 7.7A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±25V On-state resistance: 26.5mΩ |
Produkt ist nicht verfügbar |