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DMN3027LFG-7

DMN3027LFG-7 Diodes Incorporated


DMN3027LFG.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
auf Bestellung 20000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+0.63 EUR
6000+ 0.6 EUR
10000+ 0.56 EUR
Mindestbestellmenge: 2000
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Technische Details DMN3027LFG-7 Diodes Incorporated

Description: MOSFET N-CH 30V 5.3A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V.

Weitere Produktangebote DMN3027LFG-7 nach Preis ab 0.62 EUR bis 1.66 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN3027LFG-7 DMN3027LFG-7 Hersteller : Diodes Incorporated DMN3027LFG.pdf MOSFET N-Ch Enh Mode FET 30Vdss 25Vgss 70A
auf Bestellung 2000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
32+1.64 EUR
37+ 1.44 EUR
100+ 1.04 EUR
500+ 0.84 EUR
1000+ 0.7 EUR
2000+ 0.62 EUR
Mindestbestellmenge: 32
DMN3027LFG-7 DMN3027LFG-7 Hersteller : Diodes Incorporated DMN3027LFG.pdf Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
auf Bestellung 20849 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.66 EUR
18+ 1.45 EUR
100+ 1 EUR
500+ 0.84 EUR
1000+ 0.71 EUR
Mindestbestellmenge: 16
DMN3027LFG-7 DMN3027LFG-7 Hersteller : Diodes Zetex 2082996649008389dmn3027lfg.pdf Trans MOSFET N-CH 30V 8A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMN3027LFG-7 DMN3027LFG-7 Hersteller : Diodes Zetex 2082996649008389dmn3027lfg.pdf Trans MOSFET N-CH 30V 8A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMN3027LFG-7 Hersteller : DIODES INCORPORATED DMN3027LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 3W
Kind of package: reel; tape
Pulsed drain current: 70A
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 7.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3027LFG-7 Hersteller : DIODES INCORPORATED DMN3027LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 3W
Kind of package: reel; tape
Pulsed drain current: 70A
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 7.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26.5mΩ
Produkt ist nicht verfügbar