auf Bestellung 210000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 0.06 EUR |
51000+ | 0.052 EUR |
102000+ | 0.047 EUR |
153000+ | 0.043 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN601DWK-7 Diodes Zetex
Description: MOSFET 2N-CH 60V 0.305A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 305mA, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote DMN601DWK-7 nach Preis ab 0.044 EUR bis 1.17 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN601DWK-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-363 T/R |
auf Bestellung 660000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601DWK-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-363 T/R |
auf Bestellung 210000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601DWK-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-363 T/R |
auf Bestellung 660000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601DWK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.305A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 477000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN601DWK-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-363 T/R |
auf Bestellung 1773 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601DWK-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-363 T/R |
auf Bestellung 1773 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601DWK-7 | Hersteller : Diodes Incorporated | MOSFET Dual N-Channel |
auf Bestellung 69410 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN601DWK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.305A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 478258 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN601DWK-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
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DMN601DWK-7 | Hersteller : Diodes Inc | Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
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DMN601DWK-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT363 Mounting: SMD Kind of package: reel; tape Gate charge: 304pC Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT363 Drain-source voltage: 60V Drain current: 0.8A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN601DWK-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT363 Mounting: SMD Kind of package: reel; tape Gate charge: 304pC Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT363 Drain-source voltage: 60V Drain current: 0.8A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar |
Produkt ist nicht verfügbar |