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DMN6022SSD-13

DMN6022SSD-13 Diodes Zetex


2906dmn6022ssd.pdf Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 6A 8-Pin SO T/R
auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.39 EUR
Mindestbestellmenge: 2500
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Technische Details DMN6022SSD-13 Diodes Zetex

Description: MOSFET BVDSS: 41V 60V SO-8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.

Weitere Produktangebote DMN6022SSD-13 nach Preis ab 0.64 EUR bis 1.92 EUR

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Preis ohne MwSt
DMN6022SSD-13 DMN6022SSD-13 Hersteller : Diodes Incorporated DMN6022SSD.pdf Description: MOSFET BVDSS: 41V 60V SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.74 EUR
5000+ 0.69 EUR
Mindestbestellmenge: 2500
DMN6022SSD-13 DMN6022SSD-13 Hersteller : Diodes Incorporated DMN6022SSD.pdf Description: MOSFET BVDSS: 41V 60V SO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 7490 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.92 EUR
16+ 1.69 EUR
100+ 1.3 EUR
500+ 1.02 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 14
DMN6022SSD-13 Hersteller : Diodes Incorporated DMN6022SSD-1365549.pdf MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 4929 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
29+1.81 EUR
34+ 1.56 EUR
100+ 1.08 EUR
500+ 0.9 EUR
1000+ 0.77 EUR
2500+ 0.65 EUR
5000+ 0.64 EUR
Mindestbestellmenge: 29
DMN6022SSD-13
Produktcode: 178551
DMN6022SSD.pdf Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
DMN6022SSD-13 DMN6022SSD-13 Hersteller : Diodes Zetex 2906dmn6022ssd.pdf Trans MOSFET N-CH 60V 6A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMN6022SSD-13 DMN6022SSD-13 Hersteller : Diodes Inc 2906dmn6022ssd.pdf Trans MOSFET N-CH 60V 6A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMN6022SSD-13 DMN6022SSD-13 Hersteller : DIODES INCORPORATED DMN6022SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 45A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN6022SSD-13 DMN6022SSD-13 Hersteller : DIODES INCORPORATED DMN6022SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 45A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar