DTA123JM3T5G onsemi
Hersteller: onsemiDescription: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 170250 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8689+ | 0.072 EUR |
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Technische Details DTA123JM3T5G onsemi
Description: TRANS PREBIAS PNP 50V SOT723, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SOT-723, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 260 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTA123JM3T5G nach Preis ab 0.091 EUR bis 0.77 EUR
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DTA123JM3T5G | Hersteller : onsemi |
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auf Bestellung 15268 Stücke: Lieferzeit 14-28 Tag (e) |
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DTA123JM3T5G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 600mW 3-Pin SOT-723 T/R |
Produkt ist nicht verfügbar |
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DTA123JM3T5G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 600mW 3-Pin SOT-723 T/R |
Produkt ist nicht verfügbar |
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DTA123JM3T5G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |