DTA143TU3HZGT106 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 0.46 EUR |
| 63+ | 0.28 EUR |
| 101+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
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Technische Details DTA143TU3HZGT106 Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Supplier Device Package: UMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DTA143TU3HZGT106 nach Preis ab 0.07 EUR bis 0.48 EUR
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DTA143TU3HZGT106 | Hersteller : ROHM Semiconductor |
Digital Transistors PNP -50V -0.1A 2.2kO SOT-323 |
auf Bestellung 3059 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA143TU3HZGT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1175 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTA143TU3HZGT106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT PNP 50V 100mA 200mW Automotive 3-Pin UMT T/R |
auf Bestellung 1403 Stücke: Lieferzeit 14-21 Tag (e) |