Suchergebnisse für "DXTN07100BP5Q-13" : 4
Art der Ansicht :
Mindestbestellmenge: 5000
Mindestbestellmenge: 5000
Mindestbestellmenge: 13
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| DXTN07100BP5Q-13 | Diodes Zetex |
 DXTN07100BP5Q-13 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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DXTN07100BP5Q-13 | Diodes Incorporated |
Description: TRANS NPN 100V 2A POWERDI5 T&R Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 175MHz Supplier Device Package: PowerDI™ 5 Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 3.2 W Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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DXTN07100BP5Q-13 | Diodes Incorporated |
Description: TRANS NPN 100V 2A POWERDI5 T&R Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 175MHz Supplier Device Package: PowerDI™ 5 Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 3.2 W Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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DXTN07100BP5Q-13 | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Mid Perf Transistor |
Produkt ist nicht verfügbar |
| DXTN07100BP5Q-13 |
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Hersteller: Diodes Zetex
DXTN07100BP5Q-13
DXTN07100BP5Q-13
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.44 EUR |
| DXTN07100BP5Q-13 |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 2A POWERDI5 T&R
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Qualification: AEC-Q101
Description: TRANS NPN 100V 2A POWERDI5 T&R
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.74 EUR |
| 10000+ | 0.68 EUR |
| DXTN07100BP5Q-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 2A POWERDI5 T&R
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Qualification: AEC-Q101
Description: TRANS NPN 100V 2A POWERDI5 T&R
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: PowerDI™ 5
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 2.03 EUR |
| 15+ | 1.77 EUR |
| 100+ | 1.23 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.87 EUR |
| 2000+ | 0.78 EUR |
| DXTN07100BP5Q-13 |
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Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Mid Perf Transistor
Bipolar Transistors - BJT Pwr Mid Perf Transistor
Produkt ist nicht verfügbar