E4D20120A Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Grade: Automotive
Description: DIODE SIL CARB 1.2KV 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Grade: Automotive
auf Bestellung 764 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 43.55 EUR |
50+ | 39.73 EUR |
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Technische Details E4D20120A Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 54.5A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1500pF @ 0V, 1MHz, Current - Average Rectified (Io): 54.5A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Grade: Automotive.
Weitere Produktangebote E4D20120A nach Preis ab 41.6 EUR bis 52.34 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt | ||||||||||||
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E4D20120A | Hersteller : Wolfspeed | Schottky Diodes & Rectifiers SiC 1200V 20A AUTO |
auf Bestellung 518 Stücke: Lieferzeit 14-28 Tag (e) |
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E4D20120A | Hersteller : WOLFSPEED |
Description: WOLFSPEED - E4D20120A - SiC-Schottky-Diode, E, Einfach, 1.2 kV, 54.5 A, 99 nC, TO-220 tariffCode: 85411000 Bauform - Diode: TO-220 Kapazitive Gesamtladung: 99nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 usEccn: EAR99 Durchschnittlicher Durchlassstrom: 54.5A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.2kV Anzahl der Pins: 2 Pins Produktpalette: E productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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E4D20120A | Hersteller : Wolfspeed | Rectifier Diode Schottky SiC 1.2KV 54.5A Automotive 2-Pin(2+Tab) TO-220 |
Produkt ist nicht verfügbar |
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E4D20120A | Hersteller : Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 112.5W; TO220-2 Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 112.5W Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 61A Max. forward voltage: 2.2V Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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E4D20120A | Hersteller : Wolfspeed(CREE) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 112.5W; TO220-2 Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 112.5W Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 61A Max. forward voltage: 2.2V Application: automotive industry |
Produkt ist nicht verfügbar |