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ECH8667-TL-H

ECH8667-TL-H onsemi

ech8667-d.pdf Hersteller: onsemi
Description: MOSFET 2P-CH 30V 5.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
auf Bestellung 2555 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.37 EUR
14+ 1.94 EUR
100+ 1.51 EUR
500+ 1.28 EUR
1000+ 1.04 EUR
Mindestbestellmenge: 11
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Technische Details ECH8667-TL-H onsemi

Description: MOSFET 2P-CH 30V 5.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, Rds On (Max) @ Id, Vgs: 39mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, FET Feature: Logic Level Gate, Supplier Device Package: 8-ECH, Part Status: Active.

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ECH8667-TL-H ECH8667-TL-H Hersteller : onsemi ECH8667_D-2310721.pdf MOSFET PCH+NCH 4V DRIVE SERIES
auf Bestellung 1653 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
22+2.39 EUR
26+ 2.01 EUR
100+ 1.57 EUR
500+ 1.33 EUR
1000+ 1.07 EUR
3000+ 1.02 EUR
Mindestbestellmenge: 22
ECH8667-TL-H Hersteller : ON Semiconductor ech8667-d.pdf
auf Bestellung 1476 Stücke:
Lieferzeit 21-28 Tag (e)
ECH8667-TL-H ECH8667-TL-H Hersteller : onsemi ech8667-d.pdf Description: MOSFET 2P-CH 30V 5.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
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