ECH8695R-TL-W ONSEMI
Hersteller: ONSEMICategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8
Application: charging control
Mounting: SMD
Semiconductor structure: common drain
Drain-source voltage: 24V
Drain current: 11A
On-state resistance: 9.1mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12.5V
Pulsed drain current: 60A
Case: ECH8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2216 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 97+ | 0.74 EUR |
| 112+ | 0.64 EUR |
| 153+ | 0.47 EUR |
| 162+ | 0.44 EUR |
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Produktbewertung abgeben
Technische Details ECH8695R-TL-W ONSEMI
Description: ONSEMI - ECH8695R-TL-W - Dual-MOSFET, n-Kanal, 24 V, 24 V, 11 A, 11 A, 0.007 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 24V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 11A, Dauer-Drainstrom Id, p-Kanal: 11A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 24V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 11A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.007ohm, Verlustleistung, p-Kanal: 1.4W, euEccn: NLR, Bauform - Transistor: SOT-28FL, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.007ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1.4W, Betriebstemperatur, max.: 150°C, SVHC: Lead (14-Jun-2023).
Weitere Produktangebote ECH8695R-TL-W nach Preis ab 0.44 EUR bis 2.05 EUR
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ECH8695R-TL-W | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8 Application: charging control Mounting: SMD Semiconductor structure: common drain Drain-source voltage: 24V Drain current: 11A On-state resistance: 9.1mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±12.5V Pulsed drain current: 60A Case: ECH8 |
auf Bestellung 2216 Stücke: Lieferzeit 14-21 Tag (e) |
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ECH8695R-TL-W | Hersteller : onsemi |
MOSFET NCH+NCH 2.5V DRIVE SERIES |
auf Bestellung 23889 Stücke: Lieferzeit 14-28 Tag (e) |
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ECH8695R-TL-W | Hersteller : onsemi |
Description: MOSFET 2N-CH 24V 11A SOT28 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 9.1mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: SOT-28FL/ECH8 Part Status: Active |
auf Bestellung 41 Stücke: Lieferzeit 21-28 Tag (e) |
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ECH8695R-TL-W | Hersteller : ONSEMI |
Description: ONSEMI - ECH8695R-TL-W - Dual-MOSFET, n-Kanal, 24 V, 24 V, 11 A, 11 A, 0.007 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 24V rohsCompliant: Y-EX Dauer-Drainstrom Id: 11A Dauer-Drainstrom Id, p-Kanal: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 24V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 11A Drain-Source-Durchgangswiderstand, p-Kanal: 0.007ohm Verlustleistung, p-Kanal: 1.4W euEccn: NLR Bauform - Transistor: SOT-28FL Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.007ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.4W Betriebstemperatur, max.: 150°C SVHC: Lead (14-Jun-2023) |
auf Bestellung 2741 Stücke: Lieferzeit 14-21 Tag (e) |
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ECH8695R-TL-W | Hersteller : ONSEMI |
Description: ONSEMI - ECH8695R-TL-W - Dual-MOSFET, n-Kanal, 24 V, 24 V, 11 A, 11 A, 0.007 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 24V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 11A Drain-Source-Durchgangswiderstand, p-Kanal: 0.007ohm Verlustleistung, p-Kanal: 1.4W euEccn: NLR Drain-Source-Durchgangswiderstand, n-Kanal: 0.007ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.4W SVHC: Lead (14-Jun-2023) |
auf Bestellung 2741 Stücke: Lieferzeit 14-21 Tag (e) |
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ECH8695R-TL-W | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 24V 11A 8-Pin SOT-28FL T/R |
Produkt ist nicht verfügbar |
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ECH8695R-TL-W | Hersteller : onsemi |
Description: MOSFET 2N-CH 24V 11A SOT28 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 9.1mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: SOT-28FL/ECH8 Part Status: Active |
Produkt ist nicht verfügbar |