EM6J1T2R Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2P-CH 20V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8000+ | 0.32 EUR |
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Technische Details EM6J1T2R Rohm Semiconductor
Description: MOSFET 2P-CH 20V 0.2A EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 200mA, Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: EMT6.
Weitere Produktangebote EM6J1T2R nach Preis ab 0.3 EUR bis 0.99 EUR
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EM6J1T2R | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 0.2A EMT6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: EMT6 |
auf Bestellung 20052 Stücke: Lieferzeit 21-28 Tag (e) |
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EM6J1T2R | Hersteller : ROHM Semiconductor |
MOSFET FET Dual Pch -20V -200mA EMT6 |
auf Bestellung 239171 Stücke: Lieferzeit 14-28 Tag (e) |
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| EM6J1T2R | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 0.2A Pulsed drain current: -0.8A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 9.6Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| EM6J1T2R | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 0.2A Pulsed drain current: -0.8A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 9.6Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |