ES1C-E3/5AT Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7500+ | 0.21 EUR |
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Technische Details ES1C-E3/5AT Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 150 V.
Weitere Produktangebote ES1C-E3/5AT nach Preis ab 0.17 EUR bis 0.96 EUR
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ES1C-E3/5AT | Hersteller : Vishay General Semiconductor | Rectifiers 1.0 Amp 150 Volt 30 Amp IFSM |
auf Bestellung 1923 Stücke: Lieferzeit 14-28 Tag (e) |
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ES1C-E3/5AT | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
auf Bestellung 18027 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1C-E3/5AT | Hersteller : Vishay | Diode Switching 150V 1A 2-Pin SMA T/R |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1C-E3/5AT | Hersteller : Vishay | Diode Switching 150V 1A 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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ES1C-E3/5AT | Hersteller : Vishay | Rectifier Diode Switching 150V 1A 15ns 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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ES1C-E3/5AT | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Leakage current: 0.1mA Case: DO214AC; SMA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Max. off-state voltage: 150V Max. forward voltage: 0.92V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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ES1C-E3/5AT | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Leakage current: 0.1mA Case: DO214AC; SMA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Max. off-state voltage: 150V Max. forward voltage: 0.92V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |