ES1CLHRVG Taiwan Semiconductor

Description: DIODE GEN PURP 150V 1A SUB SMA, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: Sub SMA, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 150 V, Qualification: AEC-Q101.