Technische Details ES1D-T MICRO
Description: 35NS, 1A, 200V, SUPER FAST RECOV, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 16pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote ES1D-T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| ES1D-T | Hersteller : Taiwan Semiconductor |
 Rectifier Diode Switching 200V 1A 35ns 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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ES1D-T | Hersteller : Taiwan Semiconductor |
Diode Switching 200V 1A 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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ES1D-T | Hersteller : Taiwan Semiconductor Corporation |
Description: 35NS, 1A, 200V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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ES1D-T | Hersteller : Taiwan Semiconductor | Rectifiers 35ns, 1A, 200V, Super Fast Recovery Rectifier |
Produkt ist nicht verfügbar |