Produkte > TAIWAN SEMICONDUCTOR CORPORATION > ES1GL RVG
ES1GL RVG

ES1GL RVG Taiwan Semiconductor Corporation

ES1AL%20SERIES_L2103.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3440 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
38+ 0.7 EUR
100+ 0.42 EUR
500+ 0.39 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 29
Produktrezensionen
Produktbewertung abgeben

Technische Details ES1GL RVG Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 400V 1A SUB SMA, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: Sub SMA, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 400 V.

Weitere Produktangebote ES1GL RVG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
ES1GL RVG ES1GL RVG Hersteller : Taiwan Semiconductor es1al_f11.pdf Diode Switching 400V 1A 2-Pin Sub SMA
Produkt ist nicht verfügbar
ES1GL RVG ES1GL RVG Hersteller : Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
ES1GL RVG ES1GL RVG Hersteller : Taiwan Semiconductor ES1AL%20SERIES_L2103.pdf Rectifiers 35ns 1A 400V Super F ast Recovery Rect
Produkt ist nicht verfügbar