ES1JF R3G Taiwan Semiconductor

Description: DIODE GEN PURP 600V 1A SMA-FL, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 9pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SMA-FL, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1, Voltage Coupled to Current - Reverse Leakage @ Vr: 600.