Suchergebnisse für "ES1J_R1_00001 (SMA)" : 1
Art der Ansicht :
Mindestbestellmenge: 365
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ES1J_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.15mA Kind of package: reel; tape |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
|
ES1J_R1_00001 |
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
675+ | 0.11 EUR |
750+ | 0.096 EUR |
910+ | 0.079 EUR |
965+ | 0.074 EUR |