ES2AHE3_A/H Vishay General Semiconductor
auf Bestellung 550 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 42+ | 1.26 EUR |
| 49+ | 1.08 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 750+ | 0.48 EUR |
| 2250+ | 0.4 EUR |
| 9750+ | 0.37 EUR |
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Technische Details ES2AHE3_A/H Vishay General Semiconductor
Description: DIODE GEN PURP 50V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Standard, Capacitance @ Vr, F: 18pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote ES2AHE3_A/H
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ES2AHE3_A/H | Hersteller : Vishay |
 Rectifier Diode Switching 50V 2A 20ns Automotive 2-Pin SMB T/R |
Produkt ist nicht verfügbar |
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ES2AHE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |