ES2BHE3_A/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6400 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3200+ | 0.42 EUR |
| 6400+ | 0.4 EUR |
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Technische Details ES2BHE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Standard, Capacitance @ Vr, F: 18pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote ES2BHE3_A/I nach Preis ab 0.37 EUR bis 1.26 EUR
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ES2BHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6403 Stücke: Lieferzeit 21-28 Tag (e) |
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ES2BHE3_A/I | Hersteller : Vishay General Semiconductor |
Rectifiers 2A,100V,20ns SMB, UF Rect, SMD |
auf Bestellung 12639 Stücke: Lieferzeit 14-28 Tag (e) |
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ES2BHE3_A/I | Hersteller : Vishay |
Rectifier Diode Switching 100V 2A 20ns Automotive 2-Pin SMB T/R |
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ES2BHE3_A/I | Hersteller : Vishay |
Rectifier Diode Switching 100V 2A 20ns Automotive AEC-Q101 2-Pin SMB T/R |
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| ES2BHE3_A/I | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 50ns; SMB; Ufmax: 0.9V; Ifsm: 50A Case: SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| ES2BHE3_A/I | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 50ns; SMB; Ufmax: 0.9V; Ifsm: 50A Case: SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
Produkt ist nicht verfügbar |