ES2GHE3_A/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2872 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
21+ | 1.25 EUR |
25+ | 1.07 EUR |
100+ | 0.74 EUR |
500+ | 0.58 EUR |
1000+ | 0.47 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ES2GHE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote ES2GHE3_A/I nach Preis ab 0.37 EUR bis 1.26 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ES2GHE3_A/I | Hersteller : Vishay General Semiconductor | Rectifiers 2A,400V,35ns, SMB F.EFF.SM DIODE |
auf Bestellung 8917 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
ES2GHE3_A/I | Hersteller : Vishay | Rectifier Diode Switching 400V 2A 50ns Automotive AEC-Q101 2-Pin SMB T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
ES2GHE3_A/I | Hersteller : Vishay | Rectifier Diode Switching 400V 2A 50ns Automotive 2-Pin SMB T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
ES2GHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |