ES2JSMA Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: DIODE GEN PURP 600V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 216 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 0.69 EUR |
| 50+ | 0.67 EUR |
| 100+ | 0.63 EUR |
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Technische Details ES2JSMA Diotec Semiconductor
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 50A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 0.6kV, Load current: 2A, Max. load current: 10A, Reverse recovery time: 35ns, Semiconductor structure: single diode, Features of semiconductor devices: superfast switching, Capacitance: 15pF, Case: SMA, Max. forward voltage: 1.7V, Max. forward impulse current: 50A, Leakage current: 0.35mA, Kind of package: reel; tape, Anzahl je Verpackung: 10 Stücke.
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Description: DIODE GEN PURP 600V 3A SMA Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
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| ES2JSMA | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Max. load current: 10A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 15pF Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape |
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