ES3D R7 Taiwan Semiconductor
auf Bestellung 632 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.31 EUR |
| 47+ | 1.12 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.61 EUR |
| 850+ | 0.49 EUR |
| 1700+ | 0.44 EUR |
| 9350+ | 0.39 EUR |
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Technische Details ES3D R7 Taiwan Semiconductor
Description: DIODE GEN PURP 200V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 45pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote ES3D R7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ES3D R7 | Hersteller : Taiwan Semiconductor |
 Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R |
Produkt ist nicht verfügbar |
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ES3D R7 | Hersteller : Taiwan Semiconductor |
Rectifier Diode Switching 200V 3A 35ns 2-Pin SMC T/R |
Produkt ist nicht verfügbar |
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| ES3D R7 | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |