ES3DBHR5G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: DIODE GEN PURP 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 82 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 1.74 EUR |
| 18+ | 1.52 EUR |
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Technische Details ES3DBHR5G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 46pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 100 µA @ 200 V.
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