ES3GBHR5G Taiwan Semiconductor


es3abhseries_a2102.pdf Hersteller: Taiwan Semiconductor
Diode Switching 400V 3A Automotive 2-Pin SMB T/R
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Technische Details ES3GBHR5G Taiwan Semiconductor

Description: DIODE GEN PURP 400V 3A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 41pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Grade: Automotive, Qualification: AEC-Q101.

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ES3GBHR5G ES3GBHR5G Hersteller : Taiwan Semiconductor Corporation ES3AB%20SERIES_C2102.pdf Description: DIODE GEN PURP 400V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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ES3GBHR5G ES3GBHR5G Hersteller : Taiwan Semiconductor ES3AB_SERIES_B1706-1918158.pdf Rectifiers 35ns 3A 400V Super F ast Recovery Rect
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