ES3GHE3_A/I

ES3GHE3_A/I

ES3GHE3_A/I

Hersteller: Vishay General Semiconductor
Rectifiers 400 Volt 3.0A 35ns Glass Passivated
es3f-1768099.pdf
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Technische Details ES3GHE3_A/I

Description: DIODE GEN PURP 400V 3A DO214AB, Packaging: Tape & Reel (TR), Part Status: Active, Diode Type: Standard, Voltage - DC Reverse (Vr) (Max): 400V, Current - Average Rectified (Io): 3A, Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50ns, Current - Reverse Leakage @ Vr: 10µA @ 400V, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Manufacturer: Vishay General Semiconductor - Diodes Division, Base Part Number: ES3G.

Preis ES3GHE3_A/I ab 0 EUR bis 0 EUR

ES3GHE3_A/I
ES3GHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ES3G
es3f.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen