ESD9BL0521P Diotec Semiconductor
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Technische Details ESD9BL0521P Diotec Semiconductor
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 100W; 6÷11V; 1A; bidirectional; DFN1006-2,SOD882, Type of diode: TVS, Peak pulse power dissipation: 100W, Max. off-state voltage: 5V, Breakdown voltage: 6...11V, Max. forward impulse current: 1A, Semiconductor structure: bidirectional, Case: DFN1006-2; SOD882, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Features of semiconductor devices: ESD protection, Capacitance: 0.5pF, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote ESD9BL0521P
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ESD9BL0521P | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: Bidirectional SMD transil diodesDescription: Diode: TVS; 100W; 6÷11V; 1A; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Peak pulse power dissipation: 100W Max. off-state voltage: 5V Breakdown voltage: 6...11V Max. forward impulse current: 1A Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 0.5pF Anzahl je Verpackung: 10000 Stücke |
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| ESD9BL0521P | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-882 (DFN1006-2) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 100W Power Line Protection: No |
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ESD9BL0521P | Hersteller : Diotec Semiconductor |
ESD Suppressors / TVS Diodes ESD Diode, DFN1006-2, 125C, 100W, Unidir |
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ESD9BL0521P | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 100W; 6÷11V; 1A; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Peak pulse power dissipation: 100W Max. off-state voltage: 5V Breakdown voltage: 6...11V Max. forward impulse current: 1A Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 0.5pF |
Produkt ist nicht verfügbar |