ESD9BL24P

ESD9BL24P DIOTEC SEMICONDUCTOR


esd9bl24p.pdf Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 350W; 26÷30V; 1A; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 350W
Max. off-state voltage: 24V
Breakdown voltage: 26...30V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 35pF
Anzahl je Verpackung: 10000 Stücke
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Technische Details ESD9BL24P DIOTEC SEMICONDUCTOR

Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 350W; 26÷30V; 1A; bidirectional; DFN1006-2,SOD882, Type of diode: TVS, Peak pulse power dissipation: 350W, Max. off-state voltage: 24V, Breakdown voltage: 26...30V, Max. forward impulse current: 1A, Semiconductor structure: bidirectional, Case: DFN1006-2; SOD882, Mounting: SMD, Leakage current: 0.5µA, Kind of package: reel; tape, Features of semiconductor devices: ESD protection, Capacitance: 35pF, Anzahl je Verpackung: 10000 Stücke.

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ESD9BL24P Hersteller : Diotec Semiconductor esd9bl24p.pdf Description: IC
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOD-882 (DFN1006-2)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 350W
Power Line Protection: No
Produkt ist nicht verfügbar
ESD9BL24P ESD9BL24P Hersteller : Diotec Semiconductor esd9bl24p.pdf ESD Suppressors / TVS Diodes ESD Diode, DFN1006-2, 125C, 350W, Unidir
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ESD9BL24P ESD9BL24P Hersteller : DIOTEC SEMICONDUCTOR esd9bl24p.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 350W; 26÷30V; 1A; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 350W
Max. off-state voltage: 24V
Breakdown voltage: 26...30V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 35pF
Produkt ist nicht verfügbar