Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > ESH1PB-M3/84A
ESH1PB-M3/84A

ESH1PB-M3/84A Vishay General Semiconductor - Diodes Division

esh1pb.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 2450 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
29+ 0.91 EUR
100+ 0.63 EUR
500+ 0.5 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 25
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Technische Details ESH1PB-M3/84A Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 100V 1A DO220AA, Packaging: Tape & Reel (TR), Package / Case: DO-220AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-220AA (SMP), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 100 V.

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ESH1PB-M3/84A ESH1PB-M3/84A Hersteller : Vishay General Semiconductor esh1pb.pdf Rectifiers 100volts 1.0amp
auf Bestellung 12775 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
47+1.12 EUR
54+ 0.97 EUR
100+ 0.72 EUR
500+ 0.57 EUR
1000+ 0.44 EUR
3000+ 0.4 EUR
Mindestbestellmenge: 47
ESH1PB-M3/84A ESH1PB-M3/84A Hersteller : Vishay General Semiconductor - Diodes Division esh1pb.pdf Description: DIODE GEN PURP 100V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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