Technische Details ESH2DHE3_A/I Vishay
Description: DIODE GEN PURP 200V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 200 V.
Weitere Produktangebote ESH2DHE3_A/I
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ESH2DHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 2A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
Produkt ist nicht verfügbar |
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| ESH2DHE3_A/I | Hersteller : Vishay Semiconductors |
Rectifiers 2A,200V,25ns SMB, UF Rect, SMD |
Produkt ist nicht verfügbar |