ESH3B R7G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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Technische Details ESH3B R7G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Standard, Capacitance @ Vr, F: 45pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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ESH3B R7G | Hersteller : Taiwan Semiconductor |
Rectifiers 3A, 100V, SUPER FAST SM RECTIFIER |
Produkt ist nicht verfügbar |