ESH3D-E3/57T

ESH3D-E3/57T Vishay General Semiconductor


esh3b-1767487.pdf Hersteller: Vishay General Semiconductor
Rectifiers 3.0 Amp 200 Volt
auf Bestellung 3257 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2 EUR
30+ 1.77 EUR
100+ 1.36 EUR
500+ 1.09 EUR
Mindestbestellmenge: 26
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Technische Details ESH3D-E3/57T Vishay General Semiconductor

Category: SMD universal diodes, Description: Diode: rectifying; SMD; 200V; 3A; 55ns; DO214AB; Ufmax: 0.9V, Type of diode: rectifying, Max. off-state voltage: 200V, Max. forward impulse current: 125A, Semiconductor structure: single diode, Case: DO214AB, Mounting: SMD, Leakage current: 0.15mA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated; ultrafast switching, Capacitance: 70pF, Reverse recovery time: 55ns, Max. forward voltage: 0.9V, Load current: 3A, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote ESH3D-E3/57T

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Preis ohne MwSt
ESH3D-E3/57T ESH3D-E3/57T Hersteller : VISHAY esh3b.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 55ns; DO214AB; Ufmax: 0.9V
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 125A
Semiconductor structure: single diode
Case: DO214AB
Mounting: SMD
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 70pF
Reverse recovery time: 55ns
Max. forward voltage: 0.9V
Load current: 3A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ESH3D-E3/57T ESH3D-E3/57T Hersteller : Vishay General Semiconductor - Diodes Division esh3b.pdf Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D-E3/57T ESH3D-E3/57T Hersteller : Vishay General Semiconductor - Diodes Division esh3b.pdf Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D-E3/57T ESH3D-E3/57T Hersteller : VISHAY esh3b.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 55ns; DO214AB; Ufmax: 0.9V
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 125A
Semiconductor structure: single diode
Case: DO214AB
Mounting: SMD
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 70pF
Reverse recovery time: 55ns
Max. forward voltage: 0.9V
Load current: 3A
Produkt ist nicht verfügbar