Technische Details FB180SA10 IR
Description: MOSFET N-CH 100V 180A SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 108A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-227, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V.
Weitere Produktangebote FB180SA10
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FB180SA10 | Hersteller : EUPEC | MODULE |
auf Bestellung 166 Stücke: Lieferzeit 21-28 Tag (e) |
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FB180SA10 Produktcode: 42818 |
Transistoren > MOSFET N-CH ZCODE: 8541 30 00 90 |
Produkt ist nicht verfügbar
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FB180SA10 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 100V 180A SOT-227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 108A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V |
Produkt ist nicht verfügbar |
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FB180SA10 | Hersteller : Vishay / Siliconix | Discrete Semiconductor Modules 100V Single N-Channel HEXFET Power MOSFET SOT-227 (Iso) |
Produkt ist nicht verfügbar |