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FCA22N60N

FCA22N60N Fairchild Semiconductor

FAIRS47406-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
auf Bestellung 545 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
65+11.19 EUR
Mindestbestellmenge: 65
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Technische Details FCA22N60N Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 2, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V.

Weitere Produktangebote FCA22N60N nach Preis ab 10.5 EUR bis 17.86 EUR

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FCA22N60N FCA22N60N Hersteller : onsemi / Fairchild FCA22N60N_D-2311578.pdf MOSFET 600V N-Channel SupreMOS
auf Bestellung 284 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+17.86 EUR
10+ 15.34 EUR
25+ 15.18 EUR
100+ 14.48 EUR
250+ 13.91 EUR
450+ 11.57 EUR
900+ 10.5 EUR
Mindestbestellmenge: 3
FCA22N60N FCA22N60N Hersteller : ON Semiconductor fca22n60n.pdf Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FCA22N60N FCA22N60N Hersteller : onsemi fca22n60n-d.pdf Description: MOSFET N-CH 600V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Produkt ist nicht verfügbar