Technische Details FCA35N60 ON Semiconductor
Description: MOSFET N-CH 600V 35A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 17.5A, 10V, Power Dissipation (Max): 312.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V.
Weitere Produktangebote FCA35N60
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FCA35N60 Produktcode: 62402 |
 Transistoren > MOSFET N-CH |
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FCA35N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| FCA35N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-3P Tube |
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FCA35N60 | Hersteller : onsemi |
Description: MOSFET N-CH 600V 35A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 17.5A, 10V Power Dissipation (Max): 312.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V |
Produkt ist nicht verfügbar |
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FCA35N60 | Hersteller : onsemi / Fairchild |
MOSFET 35A, 600V SuperFET |
Produkt ist nicht verfügbar |