FCA36N60NF ON Semiconductor
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
37+ | 4.27 EUR |
450+ | 3.89 EUR |
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Technische Details FCA36N60NF ON Semiconductor
Description: MOSFET N-CH 600V 34.9A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4245 pF @ 100 V.
Weitere Produktangebote FCA36N60NF nach Preis ab 5.03 EUR bis 11.28 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FCA36N60NF | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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FCA36N60NF | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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FCA36N60NF | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 801 Stücke: Lieferzeit 14-21 Tag (e) |
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FCA36N60NF | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 801 Stücke: Lieferzeit 14-21 Tag (e) |
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FCA36N60NF | Hersteller : onsemi / Fairchild | MOSFET 600V N-Ch SupreMOS FRFET MOSFET |
auf Bestellung 440 Stücke: Lieferzeit 14-28 Tag (e) |
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FCA36N60NF | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FCA36N60NF | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 104.7A; 312W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 104.7A Power dissipation: 312W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCA36N60NF | Hersteller : onsemi |
Description: MOSFET N-CH 600V 34.9A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4245 pF @ 100 V |
Produkt ist nicht verfügbar |
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FCA36N60NF | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 104.7A; 312W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 104.7A Power dissipation: 312W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |