FCB260N65S3

FCB260N65S3

FCB260N65S3

Hersteller: onsemi
MOSFET SUPERFET3 650V D2PAK PKG
FCB260N65S3_D-2311612.pdf
verfügbar/auf Bestellung
auf Bestellung 2486 Stücke
Lieferzeit 14-28 Tag (e)

8+ 6.68 EUR
10+ 6.03 EUR
25+ 5.67 EUR
100+ 4.86 EUR

Technische Details FCB260N65S3

Description: MOSFET N-CH 650V 12A D2PAK, Base Part Number: FCB26, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: D²PAK (TO-263), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 90W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 400V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 1.2mA, Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Drain to Source Voltage (Vdss): 650V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR).

Preis FCB260N65S3 ab 4.86 EUR bis 6.81 EUR

FCB260N65S3
FCB260N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 12A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
fcb260n65s3-d.pdf
auf Bestellung 387 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.81 EUR
10+ 6.11 EUR
100+ 4.91 EUR
FCB260N65S3
FCB260N65S3
Hersteller: ON Semiconductor
N Channel SuperFET III MOSFET
fcb260n65s3-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCB260N65S3
Hersteller: ON Semiconductor

FCB260N65S3-D.PDF fcb260n65s3-d.pdf
1225 Stücke
FCB260N65S3
FCB260N65S3
Hersteller: ON Semiconductor
MOSFET SUPERFET3 650V D2PAK PKG
FCB260N65S3_D-2311612.pdf
auf Bestellung 1667 Stücke
Lieferzeit 14-28 Tag (e)
FCB260N65S3
FCB260N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 12A D2PAK
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
fcb260n65s3-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCB260N65S3
FCB260N65S3
Hersteller: ON Semiconductor
Description: MOSFET N-CH 650V 12A D2PAK
Base Part Number: FCB26
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 400V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
FCB260N65S3-D.PDF
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)