FCB290N80 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 800V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
auf Bestellung 684 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.52 EUR |
| 10+ | 13.03 EUR |
| 100+ | 10.54 EUR |
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Technische Details FCB290N80 onsemi
Description: MOSFET N-CH 800V 17A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V, Power Dissipation (Max): 212W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.7mA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V.
Weitere Produktangebote FCB290N80 nach Preis ab 8.35 EUR bis 15.63 EUR
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auf Bestellung 672 Stücke: Lieferzeit 14-28 Tag (e) |
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FCB290N80 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) D2PAK T/R |
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| FCB290N80 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 212W; D2PAK Technology: SuperFET® Mounting: SMD Power dissipation: 212W Case: D2PAK Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 800V Drain current: 17A On-state resistance: 0.29Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCB290N80 | Hersteller : onsemi |
Description: MOSFET N-CH 800V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 212W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V |
Produkt ist nicht verfügbar |
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| FCB290N80 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 212W; D2PAK Technology: SuperFET® Mounting: SMD Power dissipation: 212W Case: D2PAK Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 800V Drain current: 17A On-state resistance: 0.29Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |