FCH040N65S3-F155 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V
auf Bestellung 1155 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 29.56 EUR |
| 30+ | 23.93 EUR |
| 120+ | 22.52 EUR |
| 510+ | 20.41 EUR |
| 1020+ | 18.72 EUR |
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Technische Details FCH040N65S3-F155 onsemi
Description: MOSFET N-CH 650V 65A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 6.5mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V.
Weitere Produktangebote FCH040N65S3-F155 nach Preis ab 19.68 EUR bis 29.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FCH040N65S3-F155 | Hersteller : onsemi / Fairchild |
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FCH040N65S3-F155 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 65A 3-Pin(3+Tab) TO-247 Tube |
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FCH040N65S3-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 162.5A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH040N65S3-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 162.5A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |