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FCH041N60F-F085

FCH041N60F-F085 ON Semiconductor


fch041n60f_f085-d.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 76A Automotive 3-Pin(3+Tab) TO-247 Tube
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Technische Details FCH041N60F-F085 ON Semiconductor

Description: MOSFET N-CH 600V 76A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 347 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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FCH041N60F-F085 Hersteller : ONSEMI fch041n60f_f085-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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FCH041N60F-F085 FCH041N60F-F085 Hersteller : ON Semiconductor fch041n60f_f085-d.pdf Trans MOSFET N-CH 600V 76A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
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FCH041N60F-F085 FCH041N60F-F085 Hersteller : ON Semiconductor fch041n60f_f085-d.pdf Trans MOSFET N-CH 600V 76A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
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FCH041N60F-F085 FCH041N60F-F085 Hersteller : onsemi fch041n60f_f085-d.pdf Description: MOSFET N-CH 600V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 347 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FCH041N60F-F085 FCH041N60F-F085 Hersteller : onsemi / Fairchild FCH041N60F_F085_D-2311743.pdf MOSFET Auto SuperFET2 600V 41mOhm, 76A, FRFET
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FCH041N60F-F085 Hersteller : ONSEMI fch041n60f_f085-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar