FCH041N65EFL4 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.6mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V
auf Bestellung 232 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 24.08 EUR |
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Technische Details FCH041N65EFL4 Fairchild Semiconductor
Description: MOSFET N-CH 650V 76A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 5V @ 7.6mA, Supplier Device Package: TO-247-4, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V.
Weitere Produktangebote FCH041N65EFL4 nach Preis ab 22.1 EUR bis 34.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FCH041N65EFL4 | Hersteller : onsemi / Fairchild |
MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET |
auf Bestellung 430 Stücke: Lieferzeit 14-28 Tag (e) |
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FCH041N65EFL4 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 76A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH041N65EFL4 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 76A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCH041N65EFL4 | Hersteller : ONSEMI |
Description: ONSEMI - FCH041N65EFL4 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 232 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH041N65EFL4 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 76A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH041N65EFL4 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH041N65EFL4 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 76A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FCH041N65EFL4 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 76A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FCH041N65EFL4 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 76A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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 |
FCH041N65EFL4 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 76A TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 7.6mA Supplier Device Package: TO-247-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V |
Produkt ist nicht verfügbar |
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| FCH041N65EFL4 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |