FCH041N65F-F085 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 650V 76A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13566 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 76A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13566 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 163 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
32+ | 22.61 EUR |
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Technische Details FCH041N65F-F085 Fairchild Semiconductor
Description: MOSFET N-CH 650V 76A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13566 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote FCH041N65F-F085 nach Preis ab 22.7 EUR bis 33.85 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FCH041N65F-F085 | Hersteller : onsemi / Fairchild | MOSFET 650V N-Channel SuperFET II MOSFET |
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FCH041N65F-F085 | Hersteller : ON Semiconductor |
auf Bestellung 9884 Stücke: Lieferzeit 21-28 Tag (e) |
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FCH041N65F-F085 | Hersteller : ONSEMI |
Description: ONSEMI - FCH041N65F-F085 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 163 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH041N65F-F085 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Mounting: THT Case: TO247 Kind of package: tube Pulsed drain current: 228A Power dissipation: 595W Gate charge: 277nC Polarisation: unipolar Drain current: 76A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 36mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH041N65F-F085 | Hersteller : ON Semiconductor | FCH041N65F_F085 ON Semiconductor Transistors MOSFETs N-CH 650V 76A Automotive 3-Pin(3+Tab) TO-247 Tube - Arrow.com |
Produkt ist nicht verfügbar |
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FCH041N65F-F085 | Hersteller : ON Semiconductor | FCH041N65F_F085 ON Semiconductor Transistors MOSFETs N-CH 650V 76A Automotive 3-Pin(3+Tab) TO-247 Tube - Arrow.com |
Produkt ist nicht verfügbar |
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FCH041N65F-F085 | Hersteller : ON Semiconductor | FCH041N65F_F085 ON Semiconductor Transistors MOSFETs N-CH 650V 76A Automotive 3-Pin(3+Tab) TO-247 Tube - Arrow.com |
Produkt ist nicht verfügbar |
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FCH041N65F-F085 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 76A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FCH041N65F-F085 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Mounting: THT Case: TO247 Kind of package: tube Pulsed drain current: 228A Power dissipation: 595W Gate charge: 277nC Polarisation: unipolar Drain current: 76A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 36mΩ |
Produkt ist nicht verfügbar |