FCH041N65F-F155

FCH041N65F-F155 ON Semiconductor / Fairchild


FCH041N65F_D-2311581.pdf Hersteller: ON Semiconductor / Fairchild
MOSFET SuperFET2 650V, 44 mOhm, FRFET
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Technische Details FCH041N65F-F155 ON Semiconductor / Fairchild

Description: MOSFET N-CH 650V 76A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 5V @ 7.6mA, Supplier Device Package: TO-247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13020 pF @ 100 V.

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FCH041N65F-F155 FCH041N65F-F155 Hersteller : ON Semiconductor fch041n65f-d.pdf Trans MOSFET N-CH 650V 76A 3-Pin(3+Tab) TO-247 Tube
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FCH041N65F-F155 FCH041N65F-F155 Hersteller : onsemi fch041n65f-d.pdf Description: MOSFET N-CH 650V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.6mA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13020 pF @ 100 V
Produkt ist nicht verfügbar
FCH041N65F-F155 Hersteller : ONSEMI fch041n65f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Pulsed drain current: 228A
Power dissipation: 595W
Gate charge: 277nC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 36mΩ
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